Nisshinbo Develops Dual Diodes for Microwave Wireless Power Transfer
Why this is here: The new diodes offer a typical forward voltage of 0.1V, enabling efficient DC conversion even in low-power IoT applications, a key challenge for practical microwave WPT systems.
Nisshinbo Micro Devices released a new series of dual diodes for microwave wireless power transfer (WPT) systems. The diodes utilize gallium arsenide wafer technology and aim to improve DC conversion efficiency. They combine low forward voltage with high DC withstand voltage for stable operation across a wide power range.
The series includes models optimized for both 1W and 1mW power classes. All devices support 920MHz, 2.4GHz, and 5.7GHz frequency bands. Nisshinbo highlights low reverse leakage current and capacitance for high-frequency rectification.
These diodes are housed in a compact 1.2x1.2mm DFN1212-4-HD package. This package integrates two diodes, reducing PCB space and simplifying circuit configurations. Designers can access SPICE models and application notes for circuit development.